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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
3.1
3.5
12
16
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
50
3µs, 30%
46
Input
IGN3135L12
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN3135L12 | 3.1 | 3.5 | 12 | 16 | 50 | 3µs, 30% | 46 | Input | PL32A2 |
IGN3135L12 is a high power GaN transistor, best suited for S-band radar applications. Specified for use under Class AB operation, this transistor operates at 3.1-3.5 GHz of operating frequency, a minimum of 12W of peak output power, 46V, and 30% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
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