IB0607S10 Sub-1 GHz Transistor Operating at 12W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width & Duty factor Voltage
(V)
Matching Package
0.653 0.687 10 10 49 20µs, 2% 50 None P32A5

Image for Integra Part Number IB0607S10

IB0607S10 is a high power pulsed avionics transistor designed for Sub-1 GHz avionics systems operating at 0.653 - 0.687 GHz. While operating in Class C mode under 20us pulse conditions at VCC= 50V, this common base device supplies a minimum of 12W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. All devices are 100% screened for large signal RF parameters.

FEATURES

  • Silicon Bipolar
  • Matched to 50-ohms
  • 12W Output Power
  • 100% High Power RF Tested
  • Class C Operation

APPLICATIONS

  • Sub-1 GHz Technology

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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