IB0607S100 Sub-1 GHz Transistor Operating at 120W
| Frequency Low (GHz) |
Frequency High (GHz) |
Output Power (W) |
Gain (dB) |
Efficiency (%) |
Pulse width & Duty factor | Voltage (V) |
Matching | Package |
|---|---|---|---|---|---|---|---|---|
| 0.653 | 0.687 | 100 | 13 | 62 | 20µs, 2% | 50 | Input | P32A5 |
IB0607S100 is a high power pulsed avionics transistor designed for Sub-1 GHz avionics systems operating at 0.653 to 0.687 GHz. While operating in Class C mode under 20us pulse conditions at VCC= 50V, this common base device supplies a minimum of 120W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.
FEATURES
- Silicon Bipolar
- Matched to 50-ohms
- 120W Output Power
- 100% High Power RF Tested
- Class C Operation
APPLICATIONS
- Sub-1 GHz Technology
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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