Frequency Low (GHz) | Frequency High (GHz) | Output Power (W) | Gain (dB) | Efficiency (%) | Pulse width & Duty factor | Voltage (V) | Matching | Package |
---|---|---|---|---|---|---|---|---|
0.653 | 0.687 | 1000 | 9 | 55 | 20µs, 2% | 50 | Input | P64A6 |
IB0607S1000 is a high power pulsed transistor designed for Sub-1 GHz avionics systems operating at 0.653 to 0.687 GHz. While operating in Class C mode under 20us pulse conditions at VCC=50V, this common base device supplies a minimum of 1000W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.