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IB0607S1000 is a high power pulsed transistor designed for Sub-1 GHz avionics systems operating at 0.653 to 0.687 GHz. While operating in Class C mode under 20us pulse conditions at VCC=50V, this common base device supplies a minimum of 1000W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.