IB0810M100 Bipolar L-Band Transistor Operating at 100W
| Frequency Low (GHz) |
Frequency High (GHz) |
Output Power (W) |
Gain (dB) |
Efficiency (%) |
Pulse width & Duty factor | Voltage (V) |
Matching | Package |
|---|---|---|---|---|---|---|---|---|
| 0.87 | 0.99 | 100 | 10 | 69 | 300µs, 15% | 36 | Input | P44C3 |
IB0810M100 is a high power pulsed transistor device designed for L-band radar systems operating over the instantaneous bandwidth of 0.870 - 0.990 GHz. While operating in Class C mode at VCC=36V, this common base device supplies a minimum of 100W of peak pulse power under the conditions of 300us pulse width and 15% duty cycle. All devices are 100% screened for large signal RF parameters in a broadband RF test fixture with no external tuning.
FEATURES
- Silicon Bipolar
- Matched to 50-ohms
- 100W Output Power
- 100% High Power RF Tested
- Class C Operation
APPLICATIONS
- L-Band Radar
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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