IB0810M12 Bipolar L-Band Transistor Operating at 12W

Frequency Low
Frequency High
Output Power
Pulse width & Duty factor Voltage
Matching Package
0.87 0.99 12 8 53 300µs, 15% 36 None P44C3

Image for Integra Part Number IB0810M12

IB0810M12 is a high power pulsed transistor device designed for L-band radar systems operating over the instantaneous bandwidth of 0.870 - 0.990 GHz. While operating in Class C mode this common base device supplies a minimum of 12W of peak pulse power under the conditions of 300µs pulse width and 15% duty cycle. All devices are 100% screened for large signal RF parameters in a broadband RF test fixture with no external tuning.


  • Silicon Bipolar
  • Matched to 50-ohms
  • 12W Output Power
  • 100% High Power RF Tested
  • Class C Operation


  • L-Band Radar


  • EAR99

For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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