IB0912L30 Bipolar Transistor Operating at 30W

Frequency Low
Frequency High
Output Power
Pulse width & Duty factor Voltage
Matching Package
0.96 1.215 30 11 61 450µs, 15% 36 Input P22A1

Image for Integra Part Number IB0912L30

IB0912L30 is a high power pulsed transistor device designed for systems operating over the instantaneous bandwidth of 0.960 - 1.215 GHz. While operating in Class C mode under 450us-15% pulsing conditions and VCC=36V, this common base device supplies a minimum of 30W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.


  • Silicon Bipolar
  • Matched to 50-ohms
  • 30W Output Power
  • 100% High Power RF Tested
  • Class C Operation


  • L-Band Radar


  • EAR99

For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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