|Pulse width & Duty factor||Voltage
|0.96||1.215||210||12||53||10µs, 10%||50||Input & Output||P44C7|
IB0912M210 is a high power pulsed transistor device designed for systems operating over the instantaneous bandwidth of 0.960 - 1.215 GHz. While operating in Class C mode under pulsing conditions of 10us/10% and VCC=50V, this common base device supplies a minimum of 210W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.