IB1011L40 High Power L-Band Avionics Transistor Operating at 40W
| Frequency Low (GHz) |
Frequency High (GHz) |
Output Power (W) |
Gain (dB) |
Efficiency (%) |
Pulse width & Duty factor | Voltage (V) |
Matching | Package |
|---|---|---|---|---|---|---|---|---|
| 1.03 | 1.03 | 40 | 10 | 57 | 48x (32µs On, 18µs Off), 6.4% | 48 | Input | P32A5 |
IB1011L40 is a high power pulsed avionics transistor designed for L-band avionics systems operating at 1.03 - 1.09 GHz. While operating in Class C mode under mode S - ELM pulse burst conditions at VCC = 48V, this common base device supplies a minimum of 40W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.
FEATURES
- Silicon Bipolar
- 40W Output Power
- Matched to 50-Ohms
- 100% Device RF Screening
- Class C Operation
- Single Power Supply
APPLICATIONS
- L-Band Avionics
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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