|Pulse width & Duty factor||Voltage
|1.03||1.03||470||10||57||48x (32µs On, 18µs Off), 6.4%||48||Input||P64A2|
IB1011L470 is a high power pulsed avionics transistor designed for L-band avionics systems operating at 1.03 - 1.09 GHz. While operating in Class C mode under mode S-ELM pulse burst conditions at VCC = 48V, this common base device supplies a minimum of 470W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.