IB1011M70 L-Band Avionics Transistor Operating at 70W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width & Duty factor Voltage
(V)
Matching Package
1.03 1.03 70 9 65 128x (0.5µs On, 0.5µs Off), 1% 50 Input P32A5

Image for Integra Part Number IB1011M70

IB1011M70 is a high power pulsed transistor designed for L-band avionics systems operating at 1.03 - 1.09 GHz. While operating in Class C mode under mode S pulse burst conditions at VCC = 50V, this common base device supplies a minimum of 70W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters

FEATURES

  • Silicon Bipolar
  • 70W Output Power
  • Matched to 50-Ohms
  • 100% Device RF Screening
  • Class C Operation
  • Single Power Supply

APPLICATIONS

  • L-Band Avionics

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

Request A Model

Please enter the information to the left and we will email the requested model for Product: IB1011M70.

If you wish to receive product updates and news from Integra, please check the appropriate box on the form.

Thank you for choosing Integra.

Integra

Get our Updates:



Privacy Policy


Integra Technologies
© 1997 - 2019 Integra Technologies, Inc. All Rights Reserved
Get our Updates