IB1011M70 L-Band Avionics Transistor Operating at 70W

Frequency Low
Frequency High
Output Power
Pulse width & Duty factor Voltage
Matching Package
1.03 1.03 70 9 65 128x (0.5µs On, 0.5µs Off), 1% 50 Input P32A5

Image for Integra Part Number IB1011M70

IB1011M70 is a high power pulsed transistor designed for L-band avionics systems operating at 1.03 - 1.09 GHz. While operating in Class C mode under mode S pulse burst conditions at VCC = 50V, this common base device supplies a minimum of 70W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters


  • Silicon Bipolar
  • 70W Output Power
  • Matched to 50-Ohms
  • 100% Device RF Screening
  • Class C Operation
  • Single Power Supply


  • L-Band Avionics


  • EAR99

For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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