IB1011S350 L-Band Radar Transistor Operating at 350W

Frequency Low
Frequency High
Output Power
Pulse width & Duty factor Voltage
Matching Package
1.03 1.03 350 12 59 10µs, 1% 50 Input P32A5

Image for Integra Part Number IB1011S350

IB1011S350 is a high power pulsed transistor designed for L-band radar systems operating between 1.03 - 1.09 GHz. While operating in Class C mode this common base device supplies a minimum of 350W of peak pulse power under the conditions of 10µs pulse width, 1% duty cycle. All devices are 100% screened for large signal RF parameters.


  • Silicon Bipolar
  • 350W Output Power
  • Matched to 50-Ohms
  • 100% Device RF Screening
  • Class C Operation
  • Single Power Supply


  • L-Band Radar


  • EAR99

For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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