IB1011S350 L-Band Radar Transistor Operating at 350W
| Frequency Low (GHz) |
Frequency High (GHz) |
Output Power (W) |
Gain (dB) |
Efficiency (%) |
Pulse width & Duty factor | Voltage (V) |
Matching | Package |
|---|---|---|---|---|---|---|---|---|
| 1.03 | 1.03 | 350 | 12 | 59 | 10µs, 1% | 50 | Input | P32A5 |
IB1011S350 is a high power pulsed transistor designed for L-band radar systems operating between 1.03 - 1.09 GHz. While operating in Class C mode this common base device supplies a minimum of 350W of peak pulse power under the conditions of 10µs pulse width, 1% duty cycle. All devices are 100% screened for large signal RF parameters.
FEATURES
- Silicon Bipolar
- 350W Output Power
- Matched to 50-Ohms
- 100% Device RF Screening
- Class C Operation
- Single Power Supply
APPLICATIONS
- L-Band Radar
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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