IB1012S10 Bipolar L-Band Avionics Transistor Operating at 10W

Frequency Low
Frequency High
Output Power
Pulse width & Duty factor Voltage
Matching Package
1.025 1.15 10 11 43 10µs, 1% 50 Input & Output P32C1

Image for Integra Part Number IB1012S10

IB1012S10 is a high power pulsed avionics transistor designed for L-band avionics systems operating at 1.025 - 1.150 GHz. While operating in Class C mode under DME pulse conditions at VCC=50V, this common base device supplies a minimum of 10W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.


  • Silicon Bipolar
  • Matched to 50-ohms
  • 10W Output Power
  • 100% High Power RF Tested
  • Class C Operation


  • L-Band Avionics


  • EAR99

For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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