IB1012S150 High Power L-Band Transistor Operating at 150W
| Frequency Low (GHz) |
Frequency High (GHz) |
Output Power (W) |
Gain (dB) |
Efficiency (%) |
Pulse width & Duty factor | Voltage (V) |
Matching | Package |
|---|---|---|---|---|---|---|---|---|
| 1.025 | 1.15 | 150 | 10 | 30 | 10µs, 1% | 50 | Input & Output | P44C14 |
IB1012S150 is a high power pulsed transistor designed for L-band avionics systems operating at 1.025 - 1.150 GHz. While operating in Class C mode under DME pulse conditions at VCC=50V, this common base device supplies a minimum of 150W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.
FEATURES
- Silicon Bipolar
- Matched to 50-ohms
- 150W Output Power
- 100% High Power RF Tested
- Class C Operation
APPLICATIONS
- L-Band Avionics
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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