IB1012S50 L-Band Avionics Transistor Operating at 50W
| Frequency Low (GHz) | Frequency High (GHz) | Output Power (W) | Gain (dB) | Efficiency (%) | Pulse width & Duty factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
| 1.025 | 1.15 | 50 | 11 | 49 | 10µs, 1% | 50 | Input | P32A5 |
IB1012S50 is a high power pulsed avionics transistor designed for L-band avionics systems operating at 1.025 - 1.150 GHz. While operating in Class C mode under DME pulse conditions at VCC=50V, this common base device supplies a minimum of 50 W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.
FEATURES
- Silicon Bipolar
- Matched to 50-ohms
- 50W Output Power
- 100% High Power RF Tested
- Class C Operation
APPLICATIONS
- L-Band Avionics
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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