|Pulse width & Duty factor||Voltage
|1.2||1.4||150||8||50||100µs, 10%||40||Input & Output||P32A5|
IB1214M150 is a high power pulsed transistor device designed for L-band radar systems operating over the instantaneous bandwidth of 1.215 - 1.400 GHz. While operating in Class C mode this common base device supplies a minimum of 150W of peak pulse power under the conditions of 100us pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters.