IB1214M150 High Power L-Band Transistor Supplying 150W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width & Duty factor Voltage
(V)
Matching Package
1.2 1.4 150 8 50 100µs, 10% 40 Input & Output P32A5

Image for Integra Part Number IB1214M150

IB1214M150 is a high power pulsed transistor device designed for L-band radar systems operating over the instantaneous bandwidth of 1.215 - 1.400 GHz. While operating in Class C mode this common base device supplies a minimum of 150W of peak pulse power under the conditions of 100us pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters.

FEATURES

  • Silicon Bipolar
  • Matched to 50-ohms
  • 150W Output Power
  • 100% High Power RF Tested
  • Class C Operation

APPLICATIONS

  • L-Band Radar

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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