IB2226M160 High Power S-Band Transistor Supplying 160W

Frequency Low
Frequency High
Output Power
Pulse width & Duty factor Voltage
Matching Package
2.25 2.55 160 9 54 200µs, 10% 38 Input & Output P32A5

Image for Integra Part Number IB2226M160

IB2226M160 is a high power pulsed transistor designed for S-band radar systems operating over the instantaneous bandwidth of 2.25 - 2.55 GHz. While operating in Class C mode this common base device supplies a minimum of 160 W of peak pulse power under the conditions of 200µs pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters, including power gain compression.


  • Silicon Bipolar
  • Matched to 50-ohms
  • 160W Output Power
  • 100% High Power RF Tested
  • Class C Operation


  • S-Band Radar


  • EAR99

For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

Request A Model

Please enter the information to the left and we will email the requested model for Product: IB2226M160.

If you wish to receive product updates and news from Integra, please check the appropriate box on the form.

Thank you for choosing Integra.


Get our Updates:

Privacy Policy

Integra Technologies
© 1997 - 2019 Integra Technologies, Inc. All Rights Reserved
Get our Updates