IB2729M170 High Power S-Band Transistor Supplying 170W

Frequency Low
Frequency High
Output Power
Pulse width & Duty factor Voltage
Matching Package
2.7 2.9 170 10 50 100µs, 10% 36 Input & Output P32A5

Image for Integra Part Number IB2729M170

IB2729M170 is a high power pulsed transistor designed for S-band ATC radar systems operating over the instantaneous bandwidth of 2.7 - 2.9 GHz. While operating in Class C mode this common base device supplies a minimum of 170 W of peak pulse power under the conditions of 100µs pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters, including power gain compression.


  • Silicon Bipolar
  • Matched to 50-ohms
  • 170W Output Power
  • 100% High Power RF Tested
  • Class C Operation


  • S-Band Radar


  • EAR99

For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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