|Pulse width & Duty factor||Voltage
|2.7||3.1||110||9||50||200µs, 10%||36||Input & Output||P32A5|
IB2731M110 is a high power pulsed transistor designed for S-band radar systems operating over the instantaneous bandwidth of 2.7 - 3.1 GHz. While operating in Class C mode this common base device supplies a minimum of 110 W of peak pulse power under the conditions of 200µs pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters, including power gain compression.