IB3135MH45 High Power S-Band Transistor Supplying 45W
| Frequency Low (GHz) |
Frequency High (GHz) |
Output Power (W) |
Gain (dB) |
Efficiency (%) |
Pulse width & Duty factor | Voltage (V) |
Matching | Package |
|---|---|---|---|---|---|---|---|---|
| 3.1 | 3.5 | 45 | 9 | 42 | 100µs, 10% | 36 | Input & Output | P44C3 |
IB3135MH45 is a high power pulsed transistor designed for S-band radar systems operating over the instantaneous bandwidth of 3.1 - 3.5 GHz. While operating in Class C mode this common base device supplies a minimum of 45 W of peak pulse power under the conditions of 100us pulse width and 10% duty cycle over the frequency range. All devices are 100% screened for large signal RF parameters, including power gain compression.
FEATURES
- Silicon Bipolar
- Matched to 50-ohms
- 45W Output Power
- 100% High Power RF Tested
- Class C Operation
APPLICATIONS
- S-Band Radar
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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