IB3135MH75 High Power S-Band Transistor Supplying 75W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width & Duty factor Voltage
(V)
Matching Package
3.1 3.5 75 9 49 100µs, 10% 36 Input & Output P44C4

Image for Integra Part Number IB3135MH75

IB3135MH75 is a high power pulsed transistor designed for S-band radar systems operating over the instantaneous bandwidth of 3.1 - 3.5 GHz. While operating in Class C mode this common base device supplies a minimum of 75 W of peak pulse power under the conditions of 150us pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters, including power gain compression.

FEATURES

  • Silicon Bipolar
  • Matched to 50-ohms
  • 75W Output Power
  • 100% High Power RF Tested
  • Class C Operation

APPLICATIONS

  • S-Band Radar

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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