IB450S300 Transistor Best Suited For Radar Systems Operating at 300W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width & Duty factor Voltage
(V)
Matching Package
0.45 0.45 300 11 63 30µs, 10% 40 Input P44I1

Image for Integra Part Number IB450S300

IB450S300 is a high power pulsed radar transistor designed for UHF radar systems operating at .45 GHz. While operating in Class C mode, this common base device supplies a minimum of 300W of peak pulse power under the conditions of 30µs pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters. Excellent spectral stability into output mismatch over a broad input power range make it ideal for use in reliable high power solid state transmitters.

FEATURES

  • Silicon Bipolar
  • 300W Output Power
  • Matched to 50-Ohms
  • 100% Device RF Screening
  • Class C Operation
  • Single Power Supply

APPLICATIONS

  • UHF Radar

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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