IB450S300 Transistor Best Suited For Radar Systems Operating at 300W
| Frequency Low (GHz) |
Frequency High (GHz) |
Output Power (W) |
Gain (dB) |
Efficiency (%) |
Pulse width & Duty factor | Voltage (V) |
Matching | Package |
|---|---|---|---|---|---|---|---|---|
| 0.45 | 0.45 | 300 | 11 | 63 | 30µs, 10% | 40 | Input | P44I1 |
IB450S300 is a high power pulsed radar transistor designed for UHF radar systems operating at .45 GHz. While operating in Class C mode, this common base device supplies a minimum of 300W of peak pulse power under the conditions of 30µs pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters. Excellent spectral stability into output mismatch over a broad input power range make it ideal for use in reliable high power solid state transmitters.
FEATURES
- Silicon Bipolar
- 300W Output Power
- Matched to 50-Ohms
- 100% Device RF Screening
- Class C Operation
- Single Power Supply
APPLICATIONS
- UHF Radar
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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