Frequency Low (GHz) |
Frequency High (GHz) |
Output Power (W) |
Gain (dB) |
Efficiency (%) |
Pulse width & Duty factor | Voltage (V) |
Matching | Package |
---|---|---|---|---|---|---|---|---|
0.125 | 0.167 | 650 | 9 | 62 | 1ms, 20% | 34 | None | P44I1 |
IDM165L650 is a high power pulsed transistor designed for Sub-1 GHz systems operating at 0.125 - 0.167 GHz. Operating at a pulse width of 1ms with a duty factor of 20%, this dual MOSFET device supplies a minimum of 650W of peak pulse power at a fixed input power of 80W across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters in the broadband RF test fixture across the entire specified operating bandwidth with no variable or external tuning.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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