IDM165L650 High Power VDMOS Transistor Operating at 650W
| Frequency Low (GHz) |
Frequency High (GHz) |
Output Power (W) |
Gain (dB) |
Efficiency (%) |
Pulse width & Duty factor | Voltage (V) |
Matching | Package |
|---|---|---|---|---|---|---|---|---|
| 0.125 | 0.167 | 650 | 9 | 62 | 1ms, 20% | 34 | None | P44I1 |
IDM165L650 is a high power pulsed transistor designed for Sub-1 GHz systems operating at 0.125 - 0.167 GHz. Operating at a pulse width of 1ms with a duty factor of 20%, this dual MOSFET device supplies a minimum of 650W of peak pulse power at a fixed input power of 80W across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters in the broadband RF test fixture across the entire specified operating bandwidth with no variable or external tuning.
FEATURES
- Silicon VDMOS
- Matched to 50-ohms
- 650W Output Power
- 100% High Power RF Tested
- Class C Operation
APPLICATIONS
- Sub-1 GHz Technology
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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