IDM265L650 High Power VDMOS Sub-1 GHz Transistor Operating at 650W

Frequency Low
Frequency High
Output Power
Pulse width & Duty factor Voltage
Matching Package
0.19 0.265 650 8 58 1ms, 20% 34 None P44C5 x2

Image for Integra Part Number IDM265L650

IDM265L650 is a high power pulsed transistor designed for Sub-1 GHz systems operating at 0.19 - 0.265 GHz. Operating at a pulse width of 1ms with a duty factor of 20%, this dual MOSFET device supplies a minimum of 650W of peak pulse power at a fixed input power of 110W across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters in the broadband RF test fixture across the entire specified operating bandwidth with no variable or external tuning.


  • Silicon VDMOS
  • Matched to 50-ohms
  • 650W Output Power
  • 100% High Power RF Tested
  • Class B Operation


  • Sub-1 GHz Technology


  • EAR99

For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

Request A Model

Please enter the information to the left and we will email the requested model for Product: IDM265L650.

If you wish to receive product updates and news from Integra, please check the appropriate box on the form.

Thank you for choosing Integra.


Get our Updates:

Privacy Policy

Integra Technologies
© 1997 - 2019 Integra Technologies, Inc. All Rights Reserved
Get our Updates