IGN0110UM100 High Power Broadband Transistor Offering 100W

Frequency Low
Frequency High
Output Power
Pulse width & Duty factor Voltage
Matching Package
0.1 1 100 13 55 CW 28 None PL22D1

Image for Integra Part Number IGN0110UM100

IGN0110UM100 is a high power GaN transistor, designed for Broadband applications. This transistor operates over the 0.10 - 1.00 GHz instantaneous frequency band. It supplies a minimum of 100 W of output power with 12 dB gain. Specified operation is with Class AB bias. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.


  • GaN on SiC HEMT Technology
  • 100W Output Power
  • Class AB Operation
  • Pre-matched Internal Impedance
  • 100% High Power RF Tested
  • Negative Gate Voltage/Bias Sequencing


  • Broadband


  • EAR99

For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

Request A Model

Please enter the information to the left and we will email the requested model for Product: IGN0110UM100.

If you wish to receive product updates and news from Integra, please check the appropriate box on the form.

Thank you for choosing Integra.


Get our Updates:

Privacy Policy

Integra Technologies
© 1997 - 2019 Integra Technologies, Inc. All Rights Reserved
Get our Updates