IGN0160UM12 High Power Broadband GaN Transistor

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width & Duty factor Voltage
(V)
Matching Package
0.1 6 12 17 56 CW 50 None PL21A1

Image for Integra Part Number IGN0160UM12

IGN0160UM12 is a high power GaN transistor, designed for Broadband applications. This transistor operates over the 100MHz - 6GHz instantaneous frequency band. It supplies a minimum of 12W of output power with 17dB gain. Specified operation is Class AB. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

  • GaN on SiC HEMT Technology
  • 12W Output Power
  • Unmatched
  • 100% High Power RF Tested
  • Class AB Opperation
  • Negative Gate Voltage/Bias Sequencing

APPLICATIONS

  • Broadband

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

Request A Model

Please enter the information to the left and we will email the requested model for Product: IGN0160UM12.

If you wish to receive product updates and news from Integra, please check the appropriate box on the form.

Thank you for choosing Integra.

Integra

Get our Updates:



Privacy Policy


Integra Technologies
© 1997 - 2019 Integra Technologies, Inc. All Rights Reserved
Get our Updates