IGN0450L1250 High Power L-Band Avionics Transistor Offers 1250W
| Frequency Low (GHz) |
Frequency High (GHz) |
Output Power (W) |
Gain (dB) |
Efficiency (%) |
Pulse width & Duty factor | Voltage (V) |
Matching | Package |
|---|---|---|---|---|---|---|---|---|
| 0.43 | 0.45 | 1250 | 18.5 | 75 | 16ms, 25% | 50 | Input | PL124A1 |
IGN0450L1250 is a high power GaN-on-SiC push-pull RF power transistor that has been designed to suit the unique needs of P band radar systems. It operates over the full 430-450 MHz frequency range. Under 16ms, 25% duty cycle pulse conditions, it supplies a minimum of 1250 W of peak output power, with typically 18.5 dB of gain and 75% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with thermal enhancement and uses an epoxy-sealed ceramic lid.
FEATURES
- GaN on SiC HEMT Technology
- Output Power >1250W
- Pre-matched Input Impedance
- Exceptionally High Efficiency - up to 80%
- 100% RF Tested Under 16ms, 25% duty cycle pulse conditions
- RoHS and REACH Compliant
APPLICATIONS
- P-band Radar Systems
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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