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IGN0450L1250 High Power L-Band Avionics Transistor Offers 1250W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width & Duty factor Voltage
(V)
MatchingPackage
0.43 0.45 1250 18.5 75 16ms, 25% 50InputPL124A1
IGN0450L1250

IGN0450L1250 is a high power GaN-on-SiC push-pull RF power transistor that has been designed to suit the unique needs of P band radar systems. It operates over the full 430-450 MHz frequency range. Under 16ms, 25% duty cycle pulse conditions, it supplies a minimum of 1250 W of peak output power, with typically 18.5 dB of gain and 75% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with thermal enhancement and uses an epoxy-sealed ceramic lid.

FEATURES

  • GaN on SiC HEMT Technology
  • Output Power >1250W
  • Pre-matched Input Impedance
  • Exceptionally High Efficiency - up to 80%
  • 100% RF Tested Under 16ms, 25% duty cycle pulse conditions
  • RoHS and REACH Compliant

APPLICATIONS

  • P-band Radar Systems

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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