IGN0450M1500 P-Band, GaN/SiC, RF Power Transistor

Frequency Low
Frequency High
Output Power
Pulse width & Duty factor Voltage
Matching Package
0.43 0.45 1500 20 80 250µs, 1% 50 Input PL124A1

Image for Integra Part Number IGN0450M1500


  • GaN on SiC HEMT Technology
  • Output Power > 1500 W
  • Pre-matched Input Impedance
  • Exceptionally High Efficiency - up to 80%
  • 100% RF Tested Under 250µs, 1% duty cycle pulse conditions
  • RoSH and REACH Compliant


  • P-band Radar Systems


  • EAR99

For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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