IGN0450M1500 P-Band, GaN/SiC, RF Power Transistor

Frequency Low
Frequency High
Output Power
Pulse width & Duty factor Voltage
Matching Package
0.43 0.45 1500 20 80 250µs, 1% 50 Input PL124A1


IGN0450M1500 is a high power GaN-on-SiC push-pull RF power transistor that has been designed to suit the unique needs of P band radar systems. It operates over the full 430-450 MHz frequency range. Under 250µs, 1% duty cycle pulse conditions, it supplies a minimum of 1500 W of peak output power, with typically 20 dB of gain and 80% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with thermal enhancement and uses an epoxy-sealed ceramic lid.


  • GaN on SiC HEMT Technology
  • Output Power >1500W
  • Pre-matched Input Impedance
  • Exceptionally High Efficiency - up to 80%
  • 100% RF Tested Under 250µs, 1% duty cycle pulse conditions
  • RoHS and REACH Compliant


  • P-band Radar Systems


  • EAR99

For package dimensions, evaluation board details, and complete test specifications, view the data sheet.


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