IGN0450M250 High Power L-Band Avionics Transistor Offers 250W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width & Duty factor Voltage
(V)
Matching Package
0.42 0.45 250 24 75 100µs, 10% 50 Input PL44C1

Image for Integra Part Number IGN0450M250

FEATURES

  • GaN on SiC HEMT Technology
  • Output Power >250W
  • Pre-matched Input Impedance
  • Exceptionally High Efficiency - up to 80%
  • 100% RF Tested Under 100µs, 10% duty cycle pulse conditions
  • RoHS and REACH Compliant
  • Full Non-Linear Electrothermal Model Available for Download below

APPLICATIONS

  • P-band Radar Systems

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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