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IGN0450M250 High Power L-Band Avionics Transistor Offers 250W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width & Duty factor Voltage
(V)
MatchingPackage
0.42 0.45 250 24 75 100µs, 10% 50InputPL44C1
IGN0450M250

IGN0450M200 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of P band radar systems. It operates over the full 420-450 MHz frequency range. Under 100µs, 10% duty cycle pulse conditions, it supplies a minimum of 250 W of peak output power, with typically >24 dB of gain and 75% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxysealed ceramic lid.

FEATURES

  • GaN on SiC HEMT Technology
  • Output Power >250W
  • Pre-matched Input Impedance
  • Exceptionally High Efficiency - up to 80%
  • 100% RF Tested Under 100µs, 10% duty cycle pulse conditions
  • RoHS and REACH Compliant
  • Full Non-Linear Electrothermal Model Available for Download below

APPLICATIONS

  • P-band Radar Systems

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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