IGN0450M850 S-Band, GaN/SiC, RF Power Transistor

Frequency Low
Frequency High
Output Power
Pulse width & Duty factor Voltage
Matching Package
0.4 0.45 850 20 75 300µs, 10% 50 Input PL84A1

Image for Integra Part Number IGN0450M850


  • GaN on SiC HEMT Technology
  • Output Power > 850W
  • Pre-matched Input Impedance
  • Exceptionally High Efficiency - up to 78%
  • 100% RF Tested Under 300µs, 10% duty cycle pulse conditions
  • RoSH and REACH Compliant
  • IGN0450M850 has a bolt-down flange, IGN0450M850S is the earless flange option


  • S-band Radar Systems


  • EAR99

For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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