IGN0450M850 S-Band, GaN/SiC, RF Power Transistor
| Frequency Low (GHz) |
Frequency High (GHz) |
Output Power (W) |
Gain (dB) |
Efficiency (%) |
Pulse width & Duty factor | Voltage (V) |
Matching | Package |
|---|---|---|---|---|---|---|---|---|
| 0.4 | 0.45 | 850 | 20 | 75 | 300µs, 10% | 50 | Input | PL84A1 |
FEATURES
- GaN on SiC HEMT Technology
- Output Power > 850W
- Pre-matched Input Impedance
- Exceptionally High Efficiency - up to 78%
- 100% RF Tested Under 300µs, 10% duty cycle pulse conditions
- RoSH and REACH Compliant
- IGN0450M850 has a bolt-down flange, IGN0450M850S is the earless flange option
APPLICATIONS
- S-band Radar Systems
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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