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IGN0450M850 S-Band, GaN/SiC, RF Power Transistor

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse  width & Duty factorVoltage
(V)
MatchingPackage
0.40 0.45 850 20 75 300µs, 10% 50InputPL84A1

IGN0450M850

IGN0450M850S

IGN0450M850 and IGN0450M850S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of P band radar systems. They operate over the full 400-450 MHz frequency range. Under 300µs, 10% duty cycle pulse conditions, they supply a minimum of 850 W of peak output power, with typically >20 dB of gain and 75% efficiency. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

  • GaN on SiC HEMT Technology
  • Output Power >850W
  • Pre-matched Input Impedance
  • Exceptionally High Efficiency - up to 78%
  • 100% RF Tested Under 300µs, 10% duty cycle pulse conditions
  • RoHS and REACH Compliant
  • IGN0450M850 has a bolt-down flange, IGN0450M850S is the earless flange option

APPLICATIONS

  • S-band Radar Systems

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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