|Pulse width & Duty factor||Voltage|
|0.96||1.215||300||14||70||CW||36||Input & Output||PL95A1|
IGN0912CW300 is a high power GaN transistor best suited for L-band avionic applications. Specified for use under Class AB operation, this transistor offers 0.96-1.215 GHz of operating frequency, minimum of 300W of peak pulse power, and 36V. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.