IGN0912L125A High Power RF Transistor Operating at 0.96-1.22 GHz
| Frequency Low (GHz) | Frequency High (GHz) | Output Power (W) | Gain (dB) | Efficiency (%) | Pulse width & Duty factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
| 0.96 | 1.215 | 125 | 18 | 55 | 444x (7µs On, 6µs Off), 22.7% | 50 | Input & Output | PL44C1 |
IGN0912L125A is a high power GaN transistor best suited for L-band avionic applications. Specified for use under Class AB operation, this transistor offers 0.96-1.22 GHz of operating frequency, minimum of 125W of peak pulse power, 50V and 22.7% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
FEATURES
- GaN on SiC HEMT Technology
- 125W Output Power
- Class AB Operation
- Pre-matched Internal Impedance
- 100% High Power RF Tested
- Negative Gate Voltage/Bias Sequencing
APPLICATIONS
- L-Band Avionics
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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