IGN0912L250M High Power Transistor Operating at 0.96-1.22 GHz

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width & Duty factor Voltage
(V)
Matching Package
0.96 1.22 250 18 60 444x (7µs On, 6µs Off), 22.7% 50 Input PL44C1

Image for Integra Part Number IGN0912L250M

IGN0912L250M is a high power GaN transistor best suited for L-band avionic applications. Specified for use under Class AB operation, this transistor offers 0.96-1.22 GHz of operating frequency, minimum of 250W of peak pulse power, 50V and 20% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

  • GaN on SiC HEMT Technology
  • 250W Output Power
  • Class AB Operation
  • Pre-matched Internal Impedance
  • 100% High Power RF Tested
  • Negative Gate Voltage/Bias Sequencing

APPLICATIONS

  • L-Band Avionics

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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