|Pulse width & Duty factor||Voltage
|0.96||1.22||250||18||60||444x (7µs On, 6µs Off), 22.7%||50||Input||PL44C1|
IGN0912L250M is a high power GaN transistor best suited for L-band avionic applications. Specified for use under Class AB operation, this transistor offers 0.96-1.22 GHz of operating frequency, minimum of 250W of peak pulse power, 50V and 20% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.