IGN0912L500 High Power Transistor Operating at 0.96-1.22 GHz
| Frequency Low (GHz) |
Frequency High (GHz) |
Output Power (W) |
Gain (dB) |
Efficiency (%) |
Pulse width & Duty factor | Voltage (V) |
Matching | Package |
|---|---|---|---|---|---|---|---|---|
| 0.96 | 1.215 | 500 | 15 | 65 | 444x (7µs On, 6µs Off), 22.7% | 50 | Input & Output | PL95A1 |
IGN0912L500 is a high power GaN transistor best suited for L-band avionic applications. Specified for use under Class AB operation, this transistor offers 0.96-1.22 GHz of operating frequency, minimum of 500W of peak pulse power, 50V and 22.7% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
FEATURES
- GaN on SiC HEMT Technology
- 500W Output Power
- Negative Gate Voltage/Bias Sequencing
- Pre-matched Internal Impedance
- 100% High Power RF Tested
- Class AB Operation
APPLICATIONS
- L-Band Avionics
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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