IGN0912L500 High Power Transistor Operating at 0.96-1.22 GHz

Frequency Low
Frequency High
Output Power
Pulse width & Duty factor Voltage
Matching Package
0.96 1.215 500 15 65 444x (7µs On, 6µs Off), 22.7% 50 Input & Output PL95A1

Image for Integra Part Number IGN0912L500

IGN0912L500 is a high power GaN transistor best suited for L-band avionic applications. Specified for use under Class AB operation, this transistor offers 0.96-1.22 GHz of operating frequency, minimum of 500W of peak pulse power, 50V and 22.7% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.


  • GaN on SiC HEMT Technology
  • 500W Output Power
  • Negative Gate Voltage/Bias Sequencing
  • Pre-matched Internal Impedance
  • 100% High Power RF Tested
  • Class AB Operation


  • L-Band Avionics


  • EAR99

For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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