IGN0912LM500 High Power L-Band Avionics Transistor Offers 500W
| Frequency Low (GHz) |
Frequency High (GHz) |
Output Power (W) |
Gain (dB) |
Efficiency (%) |
Pulse width & Duty factor | Voltage (V) |
Matching | Package |
|---|---|---|---|---|---|---|---|---|
| 0.96 | 1.215 | 500 | 18 | 63 | 48x (32µs On, 18µs Off), 6.4% | 50 | Input | PL44C1 |
IGN0912LM500 and IGN0912LM500A are high power GaN-on-SiC RF power transistors that have been designed to suit the needs of IFF/SSR avionics systems, military tactical data links, and TACAN/DME systems. They operate over the full instantaneous bandwidth of 960-1220MHz. IGN0912LM500 under ELM Mode S [48x (32?s on, 18?s off), 6.4% Long Term Duty Cycle] pulse conditions and IGN0912LM500A under Link 16 [444x (7?s on, 6?s off), 22.7% Long Term Duty Cycle] pulse conditions both supply a minimum of 500 W of peak output power, with typically >18 dB of gain and 65% efficiency. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.
FEATURES
- GaN on SiC HEMT Technology
- Output Power >500 W
- Pre-matched Input Impedance
- High Efficiency - 63% typical
- 100% RF Tested Under Mode S ELM (IGN0912LM500) or Link 16 (IGN0912LM500A) pulse conditions
- RoHS and REACH Compliant
APPLICATIONS
- TACAN/DME Systems
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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