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IGN0912LM500 High Power L-Band Avionics Transistor Offers 500W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse  width & Duty factorVoltage
(V)
MatchingPackage
0.961.21550018 63 48x (32µs On, 18µs Off), 6.4%50InputPL44C1
IGN0912LM500

IGN0912LM500 and IGN0912LM500A are high power GaN-on-SiC RF power transistors that have been designed to suit the needs of IFF/SSR avionics systems, military tactical data links, and TACAN/DME systems. They operate over the full instantaneous bandwidth of 960-1220MHz. IGN0912LM500 under ELM Mode S [48x (32μs on, 18μs off), 6.4% Long Term Duty Cycle] pulse conditions and IGN0912LM500A under Link 16 [444x (7μs on, 6μs off), 22.7% Long Term Duty Cycle] pulse conditions both supply a minimum of 500 W of peak output power, with typically >18 dB of gain and 65% efficiency. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

  • GaN on SiC HEMT Technology
  • Output Power >500 W
  • Pre-matched Input Impedance
  • High Efficiency - 63% typical
  • 100% RF Tested Under Mode S ELM (IGN0912LM500) or Link 16 (IGN0912LM500A) pulse conditions
  • RoHS and REACH Compliant

APPLICATIONS

  • L-band Avionics IFF & SSR Systems - Suitable for both uplink and downlink (Transponder)
  • Also suitable for Standard Mode S and Link 16 applications
  • TACAN/DME Systems

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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