|Pulse width & Duty factor||Voltage
|1.03||1.09||1000||17||65||48x (32µs On, 18µs Off), 6.4%||50||Input||PL84A1|
IGN1011L1000R2 is a high power GaN transistor best suited for L-band avionic applications. Specified for use under Class AB operation, this transistor offers 1.03 - 1.09 GHz of operating frequency, minimum of 1000W of peak pulse power, 50V and 6.4% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.