|Pulse width & Duty factor||Voltage
|1.03||1.09||1200||17||85||48x (32µs On, 18µs Off), 6.4%||50||Input||PL84A1|
IGN1011L1200 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of IFF/SSR avionics systems. It operates at both 1030 and 1090 MHz. Under ELM Mode S [48x (32?s on, 18?s off), 6.4% Long Term Duty Cycle] pulse conditions, it supplies a minimum of 1200 W of peak output power, with typically >17 dB of gain and 85% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.