IGN1011L1200 L-Band Avionics Transistor Offering 1200W
| Frequency Low (GHz) |
Frequency High (GHz) |
Output Power (W) |
Gain (dB) |
Efficiency (%) |
Pulse width & Duty factor | Voltage (V) |
Matching | Package |
|---|---|---|---|---|---|---|---|---|
| 1.03 | 1.09 | 1200 | 17 | 85 | 48x (32µs On, 18µs Off), 6.4% | 50 | Input | PL84A1 |
IGN1011L1200 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of IFF/SSR avionics systems. It operates at both 1030 and 1090 MHz. Under ELM Mode S [48x (32?s on, 18?s off), 6.4% Long Term Duty Cycle] pulse conditions, it supplies a minimum of 1200 W of peak output power, with typically >17 dB of gain and 85% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.
FEATURES
- GaN on SiC HEMT Technology
- Output Power >1200 W
- Pre-matched Input Impedance
- Exceptionally High Efficiency - up to 85%
- 100% RF Tested Under Mode S ELM pulse conditions
- RoHS and REACH Compliant
APPLICATIONS
- Also suitable for Standard Mode S applications
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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