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IGN1011L1200 L-Band Avionics Transistor Offering 1200W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse  width & Duty factorVoltage
(V)
MatchingPackage
1.031.09120017 85 48x (32µs On, 18µs Off), 6.4%50InputPL84A1
IGN1011L1200

IGN1011L1200 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of IFF/SSR avionics systems. It operates at both 1030 and 1090 MHz. Under ELM Mode S [48x (32μs on, 18μs off), 6.4% Long Term Duty Cycle] pulse conditions, it supplies a minimum of 1200 W of peak output power, with typically >17 dB of gain and 85% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

  • GaN on SiC HEMT Technology
  • Output Power >1200 W
  • Pre-matched Input Impedance
  • Exceptionally High Efficiency - up to 85%
  • 100% RF Tested Under Mode S ELM pulse conditions
  • RoHS and REACH Compliant

APPLICATIONS

  • L-band Avionics IFF & SSR Systems
  • Suitable for both uplink and downlink (Transponder)
  • Also suitable for Standard Mode S applications

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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