IGN1011L20-PB High Power L-Band Avionics Transistor Offers 20W
| Frequency Low (GHz) |
Frequency High (GHz) |
Output Power (W) |
Gain (dB) |
Efficiency (%) |
Pulse width & Duty factor | Voltage (V) |
Matching | Package |
|---|---|---|---|---|---|---|---|---|
| 1.03 | 1.09 | 20 | 18 | 50 | 48x (32µs on, 18µs off), 6.4 | 50 | Input | PL32A2 |
IGN1011L20-PB and IGN1011L20-SP are high power GaN-on-SiC RF power transistors that have been designed to suit the needs of IFF/SSR avionics systems. They operate over the full instantaneous bandwidth of 1030- 1090MHz. IGN1011L20-PB under ELM Mode S [48x (32µs on, 18µs off), 6.4% Long Term Duty Cycle] pulse conditions and IGN1011L20-SP under standard pulse conditions [128µs, 2% Duty Cycle] both supply a minimum of 20 W of peak output power, with typically >20 dB of gain and 55% efficiency. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.
FEATURES
- GaN on SiC HEMT Technology
- Output Power >20 W
- Pre-matched Input Impedance
- High Efficiency - 55% typical
- 100% RF Tested Under Mode S ELM (IGN1011L20-PB) or standard pulse conditions (IGN1011L20-SP)
- RoHS and REACH Compliant
APPLICATIONS
- L-band Avionics IFF & SSR Systems - Suitable for both uplink and downlink (Transponder)
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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