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IGN1011L20-PB High Power L-Band Avionics Transistor Offers 20W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width & Duty factor Voltage
(V)
MatchingPackage
1.03 1.09 20 20 55 48x (32µs On, 18µs Off), 6.4% 50InputPL32A2
IGN1011L20

IGN1011L20-PB and IGN1011L20-SP are high power GaN-on-SiC RF power transistors that have been designed to suit the needs of IFF/SSR avionics systems. They operate over the full instantaneous bandwidth of 1030- 1090MHz. IGN1011L20-PB under ELM Mode S [48x (32μs on, 18μs off), 6.4% Long Term Duty Cycle] pulse conditions and IGN1011L20-SP under standard pulse conditions [128μs, 2% Duty Cycle] both supply a minimum of 20 W of peak output power, with typically >20 dB of gain and 55% efficiency. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

  • GaN on SiC HEMT Technology
  • Output Power >20 W
  • Pre-matched Input Impedance
  • High Efficiency - 55% typical
  • 100% RF Tested Under Mode S ELM (IGN1011L20-PB) or standard pulse conditions (IGN1011L20-SP)
  • RoHS and REACH Compliant

APPLICATIONS

  • L-band Avionics IFF & SSR Systems - Suitable for both uplink and downlink (Transponder)

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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