IGN1011M600 High Power L-Band Avionics Transistor Offers 600W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width & Duty factor Voltage
(V)
Matching Package
1.03 1.09 700 17 65 128µs, 2% 50 Input PL64A1

Image for Integra Part Number IGN1011M600

IGN1011M600 and IGN1011M600S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of IFF/SSR avionics systems. They operate at both 1030 and 1090 MHz. Under 128μs pulse length, 2% duty cycle pulse conditions they supply a minimum of 600 W of peak output power, with typically >17 dB of gain and 65% efficiency. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metalbased package with an epoxy-sealed ceramic lid.

FEATURES

  • GaN on SiC HEMT Technology
  • Output Power >700 W
  • Pre-matched Input Impedance
  • High Efficiency - up to 65% during the RF pulse
  • 100% RF Tested
  • RoHS and REACH Compliant

APPLICATIONS

  • L-Band Avionics

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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