IGN1011M600 High Power L-Band Avionics Transistor Offers 600W
| Frequency Low (GHz) |
Frequency High (GHz) |
Output Power (W) |
Gain (dB) |
Efficiency (%) |
Pulse width & Duty factor | Voltage (V) |
Matching | Package |
|---|---|---|---|---|---|---|---|---|
| 1.03 | 1.09 | 700 | 17 | 65 | 128µs, 2% | 50 | Input | PL64A1 |
IGN1011M600 and IGN1011M600S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of IFF/SSR avionics systems. They operate at both 1030 and 1090 MHz. Under 128μs pulse length, 2% duty cycle pulse conditions they supply a minimum of 600 W of peak output power, with typically >17 dB of gain and 65% efficiency. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metalbased package with an epoxy-sealed ceramic lid.
FEATURES
- GaN on SiC HEMT Technology
- Output Power >700 W
- Pre-matched Input Impedance
- High Efficiency - up to 65% during the RF pulse
- 100% RF Tested
- RoHS and REACH Compliant
APPLICATIONS
- L-Band Avionics
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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