IGN1012S1000 High Power L-Band Avionics Transistor Offers 1000W
| Frequency Low (GHz) | Frequency High (GHz) | Output Power (W) | Gain (dB) | Efficiency (%) | Pulse width & Duty factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
| 1.025 | 1.15 | 1000 | 16 | 50 | 32µs, 2% | 50 | Input | PL84A1 |
IGN1012L40 is a high power GaN transistor best suited for L-band avionic applications. Specified for use under Class AB operation, this transistor offers 1.025-1.150 GHz of operating frequency, minimum of 1000W of peak pulse power, 50V and 2% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
FEATURES
- GaN on SiC HEMT Technology
- 1000W Output Power
- Class AB Operation
- Pre-matched Internal Impedance -100% High Power RF Tested
- Negative Gate Voltage/Bias Sequencing
APPLICATIONS
- L-Band Avionics
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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