IGN1030M40 High Power GaN RF Transistor for Avionics Operating at 1.03 GHz
| Frequency Low (GHz) |
Frequency High (GHz) |
Output Power (W) |
Gain (dB) |
Efficiency (%) |
Pulse width & Duty factor | Voltage (V) |
Matching | Package |
|---|---|---|---|---|---|---|---|---|
| 1.03 | 1.03 | 40 | 22.6 | 55 | 300µs, 10% | 50 | Input | PL32A2 |
IGN1030M40 is a high power GaN transistor best suited for L-band avionic applications. Specified for use under Class AB operation, this transistor offers 1.03 GHz of instantaneous operating frequency, 300us pulse width and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
FEATURES
- GaN on SiC HEMT Technology
- 40W Output Power
- Includes Depletion Mode
- Pre-matched Internal Impedance
- 100% High Power RF Tested
- Class AB Operation
- Negative Gate Voltage/Bias Sequencing
APPLICATIONS
- L-Band Avionics
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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