IGN1214L500B L-Band, GaN/SiC, RF Power Transistor

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width & Duty factor Voltage
(V)
Matching Package
1.2 1.4 500 15 70 2ms, 20% 50 Input & Output PL95A1

Image for Integra Part Number IGN1214L500B

IGN1214L500B is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of modern long-pulse, long-range radar systems. It supplies a minimum of 500 W of peak output power, with typically >15 dB of gain and 70% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxysealed ceramic lid.

FEATURES

  • GaN on SiC HEMT Technology
  • Output Power >500 W
  • Pre-matched Input and Output Impedance
  • High Efficiency - up to 75%
  • 100% RF Tested Under 2ms, 20% duty cycle pulse conditions
  • RoHS and REACH Compliant

APPLICATIONS

  • L-Band Radar

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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