|Pulse width & Duty factor||Voltage
|1.2||1.4||500||15||70||2ms, 20%||50||Input & Output||PL95A1|
IGN1214L500B is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of modern long-pulse, long-range radar systems. It supplies a minimum of 500 W of peak output power, with typically >15 dB of gain and 70% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxysealed ceramic lid.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.